FCD900N60Z mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 820 mΩ
* Ultra Low Gate Charge (Typ. Qg = 13 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF)
* .
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Applications
* LCD / .
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